Quantification of Trace-Level Silicon Doping in Al<i><sub>x</sub></i>Ga<sub>1–<i>x</i></sub>N Films Using Wavelength-Dispersive X-Ray Microanalysis

نویسندگان

چکیده

Abstract Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35–100 ppm [corresponding (3–9) × 10 18 cm −3 ] doped Al x Ga 1– N films using an electron probe microanalyser also equipped with a cathodoluminescence (CL) spectrometer. Doping Si is usual way produce n -type conducting layers that are critical GaN- and N-based devices such as LEDs laser diodes. Previously, we have shown excellent agreement for Mg dopant p -GaN measured by WDX values from more widely technique of secondary ion mass spectrometry (SIMS). However, discrepancy between these methods has been reported when quantifying dopant, silicon. We identify cause inherent sample contamination propose correct this calibration relation. This new approach, method combining data derived SIMS measurements on both GaN samples, provides means content samples account taken variations ZAF corrections. presents cost-effective time-saving doping can benefit simultaneously measuring other signals, CL channeling contrast imaging.

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ژورنال

عنوان ژورنال: Microscopy and Microanalysis

سال: 2021

ISSN: ['1435-8115', '1431-9276']

DOI: https://doi.org/10.1017/s1431927621000568